-30 abs olute maximum r ating s (t a =25 c unles s otherwis e noted) parameter symbol limit unit drain-s ource voltage v ds v gate-source voltage v gs 20 v drain c urrent-c ontinuous @ t c=25 c -p ulsed i d -24 -96 -20 50 a a a w i dm drain-s ource diode f orward c urrent i s maximum p ower dissipation p d o perating j unction and s torage temperature r ange t j ,t stg -55 to 175 c thermal characteristics a 1 n 2007 s amhop microelectronics c orp. product summary v ds s i d r ds (on) ( m ) max -24a 28 @ v gs =-10v 40 @ v gs = -4.5v -30v s tu/d303s stu series to-252aa(d-pak) stu series to-251(l-pak) g g g g s s s s d d d d thermal r esistance, junction-to-case thermal r esistance, junction-to-ambient r jc 3 50 r ja /w c /w c p -c hannel e nhancement mode f ield e ffect t rans is tor @tc=25c o v, 16, s urface mount package. features super high dense cell design for low r ds (on ). r ugged and reliable. esd procteced s g d
parameter symbol c ondition min typ max unit off characteristics drain-source breakdown voltage bv ds s = v gs 0v, i d -250ua = -30 v zero g ate voltage drain c urrent i ds s v ds -20v, v gs 0v == -1 gate-body leakage i gss v gs 20v, v ds 0v = = 10 on char acte r is tics a g a te t hre s hold v olta ge v gs(th) v ds v gs ,i d = -250ua = -1 -3 v d ra in-s ourc e o n-s ta te r e s is ta nc e r ds (on) v gs -10v, i d -12a v gs -4.5v, i d -6a o n-s ta te d ra in c urre nt i d(on) v ds =-10v,v gs =-10v a s f orward trans conductance fs g v ds -10v, i d -10a dynamic char acte r is tics b input capacitance c is s c rss c oss o utput c a pa c ita nc e r everse transfer capacitance v ds =-15v, v gs =0v f =1.0mh z p f p f p f c = = = = == 5 ua mohm mohm -30 170 270 1130 11.5 s tu/d303s e le ctr ical char acte r is tics (t c =25 c unles s otherwis e noted) s witc hing c har ac te r is tic s b turn-on delay time rise time turn-o ff delay time t d(on) t r t d(off) t f v dd =-15v i d =-1a v gs = -10v r gen =6ohm ns ns ns ns totalgatecharge(10v) g ate-s ource c harge gate-drain charge q g q gs q gd v ds =-15v, i d =-12a v gs =-10v nc nc nc fall time 2 nc 22 28 100 31 19 6.4 2.7 10. 6 totalgatecharge(4.5v) 28 40 ua -1.8 34 23
parameter symbol c ondition min typ max unit e le ctr ical char acte r is tics (t c =25 c unles s otherwis e noted) drain-source diode characteristics diode f orward voltage v sd v gs =0v,is =-10a -1.3 v a notes b.g uaranteed by des ign, not s ubject to production tes ting. a.p uls e tes t:p uls e w idth 300us , duty c ycle 2% . figure 2. transfer characteristics f igure 4. o n-r e s is ta nc e va ria tion with drain c urrent and temperature -i d , drain c urrent (a) -v gs , g ate-to-s ource voltage (v ) r ds (on) ( m ) on-resistance -i d , drain c urrent (a) 3 r ds (on) , normalized s tu/d303s 60 50 40 30 20 10 0 -55 c 25 c 20 15 10 5 0 0 0.7 1.4 2.1 2.8 3.5 4.2 tj=125 c 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -55 -25 0 25 125 -0.88 tj( c) 100 50 75 v gs =-4.5v i d =-6a t j, j unction t emperature ( c ) f igure 1. output c haracteris tics -v ds , drain-to-s ource voltage (v ) -i d , drain c urrent(a) 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 v gs =-5v v gs =-3v v gs =-4v v gs =-4.5v f igure 3. on-r es is tance vs . drain c urrent and gate voltage 5101520 25 0 v gs =-10v v gs =-4.5v v gs =-10v i d =-12a v gs =-8v v gs =-10v
s tu/d303s f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hreshold v oltage bv ds s , normalized drain-s ource breakdown voltage -is, s ource-drain current (a) f igure 8. b ody diode f orward v oltage v ariation with s ource c urrent -v sd ,bodydiodeforwardvoltage(v) t j, j unction t emperature ( c ) tj, junction temperature ( c) 4 6 20.0 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =-250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua -v gs , gate- s ource voltage (v) r ds (on) ( m ) 120 100 80 60 40 20 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 24 68 10 0 f igure 5. g ate t hreshold v ariation with t emperature 25 c 125 c 75 c 25 c 75 c 125 c i d =-12a
s tu/d303s 6 -v gs , g ate to s ource v oltage (v ) f igure 10. g ate c harge qg, total gate charge (nc) 10 8 6 4 2 0 03 6 9 12 15 18 21 24 v ds =-15v i d =-12a f igure 9. c apacitance -v ds , drain-to s ource voltage (v ) c, capacitance (pf) 0 5 10 15 20 25 30 1800 1500 1200 900 600 300 0 ciss coss crss f igure 11.s witching characteris tics rg,gateresistance( ) s witching t ime (ns ) 100 10 1 1 610 60100 60 600 300 220 td(on) tr tf vds =-15v,id=-1a vgs =-10v 5 f igure 12. maximum s afe operating area -v ds , drain-s ource v oltage (v ) -i d , drain c urrent (a) 200 100 10 1 0.03 0.1 1 10 30 60 v gs =-10v single pulse tc=25 c t d(off) t rans ient t hermal impedance s quare wave p ulse duration (sec) f igure 13. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse 10m s 1 00 m s 1 s d c r d s ( on) l imit
6 s tu/d303s e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
7 s tu/d303s to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
to251 tube/to-252 to-252 carrier tape to-252 reel tape and reel data unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2 p0 p1 p2 t 6.80 2 0.1 10.3 2 0.1 2.50 2 0.1 ? 2 ? 1.5 + 0.1 -0 16.0 0.3 2 1.75 0.1 2 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 s 8 "a" to-251 tube s tu/d303s
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